Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.

Memories, both volatile and non-volatile are a critical element in various computing and logic devices, since that is where the data lives that is being processed. The mass market for memory ...

[Left] The schematic shows the multi-functions of the 2D-WS2 bottom interfacial layer for interface stability and the vertically well-ordered domain structures of HZO, which leads to excellent ...

A long-running problem in the computer world is that DRAM is the fastest memory available but also volatile, so it can't hold onto its data when power is shut off. This makes it useless for data ...

UD’s Tingyi Gu receives NSF CAREER award to study materials that can create more reliable, less energy-intensive forms of computer memory To develop the types of high-speed, energy-efficient ...

BFCO 60-nm nanodots, with single domain structures, hold promise for high-density and low-power nonvolatile magnetic memory devices. Traditional memory devices are volatile and the current ...

Artificial Intelligence (AI) and Machine Learning (ML) applications are driving increased demand for high-performance, low-power memory solutions across consumer, medical, and industrial markets.

Frontgrade™ Technologies, a leading provider of high-reliability electronic solutions for space and national security missions, today announced the expansion of its Magnetoresistive Random Access ...

Forbes contributors publish independent expert analyses and insights. This is the second in a set of four blogs about projections for digital storage and memory for the following year that we have ...

(Nanowerk Spotlight) Realizing energy-efficient, high-speed and highly integrated spintronic technologies has driven extensive research into new materials and device architectures. However, limited ...